Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

Quantum well intermixing in GaInNAs/GaAs structures

Dual wavelength single waveguide laser diode fabricated using selective area quantum well intermixing

A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiOxNy) and silicon dioxide (SiO2), respectively. Th...

High cw power using an external cavity for spectral beam combining of diode laser-bar emission.

In extension to known concepts of wavelength-multiplexing diode laser arrays, a new external cavity is presented. The setup simultaneously improves the beam quality of each single emitter of a standard 25 emitter broad-area stripe laser bar and spectrally superimposes the 25 beams into one. By using this external resonator in an "off-axis" arrangement, beam qualities of Mslow2<14 and Mfast2<3 w...

Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering

InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...

Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

We report a hybrid integrated external cavity laser by butt coupling a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip. The device lasers at 1302 nm in the O-band, a wavelength regime critical to data communication systems. We measured 18 mW on-chip output power and over 50dB side-mode suppression ratio. We also demonstrated open eye diagrams at 10 and 40 ...